Datasheet IRFH5303TR2PBF - International Rectifier MOSFET, N CH, 30 V, 23 A, PQFN56 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, N CH, 30 V, 23 A, PQFN56

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Docket:
PD -97467
IRFH5303PbF
HEXFET® Power MOSFET VDS RDS(on) max
(@VGS = 10V)
30 4.2 15 0.6 82

Specifications:

• Current Id Max: 23 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 3.6 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.6 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: QFN
• Transistor Polarity: N Channel
• Voltage Vgs Max: 1.8 V

RoHS: Yes