Datasheet IRF7663 - International Rectifier MOSFET, P MICRO-8 — Datenblatt

International Rectifier IRF7663

Part Number: IRF7663

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, P MICRO-8

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Docket:
PD-91866A
IRF7663
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel

Specifications:

  • Avalanche Single Pulse Energy Eas: 115mJ
  • Capacitance Ciss Typ: 2520 pF
  • Charge Qrr @ Tj = 25В°C Typ: 50nC
  • Continuous Drain Current Id: 8.2 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • External Depth: 5.03 mm
  • External Length / Height: 1.11 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Gfs Min: 14.5A/V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Lead Spacing: 0.65 mm
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 1
  • On Resistance Rds(on): 20 MOhm
  • On State Resistance Max: 20 MOhm
  • Package / Case: Micro8
  • Power Dissipation Pd: 1.8 W
  • Pulse Current Idm: 66 A
  • Reverse Recovery Time trr Typ: 70 ns
  • Row Pitch: 4.24 mm
  • SMD Marking: 7663
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: MicroSOIC
  • Transistor Polarity: P Channel
  • Voltage Vds: 20 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: -1 V
  • Voltage Vgs th Min: -0.6 V

Accessories:

  • Roth Elektronik - RE903