Datasheet IRF7601PBF - International Rectifier MOSFET, N, MICRO-8 — Datenblatt

International Rectifier IRF7601PBF

Part Number: IRF7601PBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, MICRO-8

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Docket:
PD - 9.1261D
IRF7601
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching

Specifications:

  • Capacitance Ciss Typ: 650 pF
  • Charge Qrr @ Tj = 25В°C Typ: 69nC
  • Continuous Drain Current Id: 5.7 A
  • Current Id Max: 5.7 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • External Depth: 5.03 mm
  • External Length / Height: 1.11 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Gfs Min: 6.1A/V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Lead Spacing: 0.65 mm
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 1
  • On Resistance Rds(on): 35 MOhm
  • On State Resistance Max: 35 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: Micro8
  • Power Dissipation Pd: 1.8 W
  • Pulse Current Idm: 30 A
  • Rate of Voltage Change dv / dt: 5V/ns
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Reverse Recovery Time trr Typ: 51 ns
  • Row Pitch: 4.24 mm
  • SMD Marking: 7601
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: MicroSOIC
  • Transistor Polarity: N Channel
  • Voltage Vds: 20 V
  • Voltage Vgs Max: 12 V

RoHS: Yes

Accessories:

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  • LICEFA - V11-7
  • Roth Elektronik - RE903