Datasheet IRF6797MTR1PBF - International Rectifier MOSFET, N-CH, 25 V, DIRECTFETMX — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N-CH, 25 V, DIRECTFETMX

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Docket:
PD - 97320
HEXFET® Power MOSFET plus Schottky Diode
RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.1m@ 10V 1.8m@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 45nC 13nC 6.2nC 38nC 38nC 1.8V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync.

FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
l
IRF6797MPbF IRF6797MTRPbF

Specifications:

• Alternate Case Style: DirectFET
• Continuous Drain Current Id: 36 A
• Current Id Max: 36 A
• Drain Source Voltage Vds: 25 V
• Mounting Type: SMD
• On Resistance Rds(on): 1.1 MOhm
• Operating Temperature Range: -40°C to +150°C
• Package / Case: MX
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 300 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: MX
• Transistor Polarity: N Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.35 V
• Voltage Vgs th Min: 1.35 V

RoHS: Yes