Datasheet BSO104N03S - Infineon MOSFET, N, 30 V, SO-8 — Datenblatt

Infineon BSO104N03S

Part Number: BSO104N03S

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N, 30 V, SO-8

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Docket:
BSO104N03S
OptiMOS®2 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for notebook DC/DC converters · Qualified according to JEDEC for target applications · N-channel · Logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Superior thermal resistance · Avalanche rated · Pb-free plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 30 9.7 13 V m A

Specifications:

  • Continuous Drain Current Id: 13 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • On Resistance Rds(on): 9.7 MOhm
  • On State Resistance @ Vgs = 4.5V: 13.6 MOhm
  • Package / Case: SOIC
  • Pulse Current Idm: 52 A
  • Threshold Voltage Vgs Typ: 1.6 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 30 V
  • Voltage Vds: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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