Datasheet SPD08N50C3 - Infineon MOSFET, N, TO-252 — Datenblatt

Infineon SPD08N50C3

Part Number: SPD08N50C3

Detaillierte Beschreibung

Manufacturer: Infineon

Description: MOSFET, N, TO-252

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Docket:
SPD08N50C3 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance
VDS @ Tjmax RDS(on) ID
560 0.6 7.6
PG-TO252

Specifications:

  • Continuous Drain Current Id: 7.6 A
  • Current Id Max: 7.6 A
  • Drain Source Voltage Vds: 560 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 600 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-252
  • Power Dissipation Pd: 83 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vds Typ: 560 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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