Datasheet IPD090N03L G - Infineon MOSFET, N CH, 40 A, 30 V, PG-TO252-3 — Datenblatt
Part Number: IPD090N03L G
Detaillierte Beschreibung
Manufacturer: Infineon
Description: MOSFET, N CH, 40 A, 30 V, PG-TO252-3
Docket:
Type
IPD090N03L G IPS090N03L G
IPF090N03L G IPU090N03L G
OptiMOS®3 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for DC/DC converters · Qualified according to JEDEC for target applications · N-channel, logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Avalanche rated · Pb-free plating; RoHS compliant Type IPD090N03L G IPF090N03L G
Specifications:
- Current Id Max: 40 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 3
- On Resistance Rds(on): 7.5 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 42 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-252
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes