Datasheet IPB054N06N3 G - Infineon MOSFET, N CH, 80 A, 60 V, PG-TO263-3 — Datenblatt
Part Number: IPB054N06N3 G
Detaillierte Beschreibung
Manufacturer: Infineon
Description: MOSFET, N CH, 80 A, 60 V, PG-TO263-3
Docket:
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IPB054N06N3 G IPP057N06N3 G
"%&$!"# 3 Power-Transistor
Features Q #451<6 B 78 65AE5>3 I C D89 1>4 C
B
Specifications:
- Current Id Max: 80 A
- Drain Source Voltage Vds: 60 V
- Number of Pins: 3
- On Resistance Rds(on): 4.4 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 115 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes