Datasheet IPB011N04N G - Infineon MOSFET, N CH, 180 A, 40 V, PG-TO263-7 — Datenblatt
Part Number: IPB011N04N G
Detaillierte Beschreibung
Manufacturer: Infineon
Description: MOSFET, N CH, 180 A, 40 V, PG-TO263-7
Docket:
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Specifications:
- Current Id Max: 180 A
- Drain Source Voltage Vds: 40 V
- Number of Pins: 7
- On Resistance Rds(on): 850µ Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 250 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes