Datasheet BSS139 - Infineon MOSFET, N, SOT-23 — Datenblatt

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Manufacturer: Infineon

Description: MOSFET, N, SOT-23

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Docket:
BSS139
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with V GS(th) indicator on reel · Pb-free lead-plating; RoHS compliant
Product Summary V DS R DS(on),max I DSS,min 250 30 0.03 V A
PG-SOT-23

Specifications:

• Continuous Drain Current Id: 40 mA
• Current Id Max: 40 mA
• Current Temperature: 25°C
• Device Marking: BSS139
• Drain Source Voltage Vds: 250 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 100 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 360 mW
• Power Dissipation Ptot Max: 360 mW
• Pulse Current Idm: 120 mA
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: STs
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 250 V
• Voltage Vgs Max: -1.4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 700 mV

RoHS: Yes