Datasheet NDT451AN - Fairchild MOSFET, N CH 30 V, 7.2 A SOT-223 — Datenblatt

Fairchild NDT451AN

Part Number: NDT451AN

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, N CH 30 V, 7.2 A SOT-223

Docket:
February 2009
NDT451AN N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

Continuous Drain Current Id: 7.2 A
Drain Source Voltage Vds: 30 V
MSL: MSL 1 - Unlimited
Number of Pins: 4
On Resistance Rds(on): 0.03 Ohm
Operating Temperature Range: -65°C to +150°C
Power Dissipation: 1.1 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 1.6 V
Transistor Case Style: SOT-223
Transistor Polarity: N Channel
RoHS: Y-Ex
SVHC: No SVHC (18-Jun-2012)