Datasheet FDS6673BZ - Fairchild MOSFET, P CH, 30 V, 14.5 A, 8SOIC — Datenblatt

Fairchild FDS6673BZ

Part Number: FDS6673BZ

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, P CH, 30 V, 14.5 A, 8SOIC

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Docket:
FDS6673BZ P-Channel PowerTrench® MOSFET
March 2009
FDS6673BZ P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8m General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook

Specifications:

  • Continuous Drain Current Id: -14.5 A
  • Drain Source Voltage Vds: -30 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 8
  • On Resistance Rds(on): 6.5 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -1.9 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • RoHS: Yes
  • SVHC: No SVHC (19-Dec-2011)