Datasheet NDS355AN - Fairchild MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, N, SOT-23

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Docket:
January 1997
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

• Continuous Drain Current Id: 1.7 A
• Current Id Max: 1.7 A
• Current Temperature: 25°C
• Device Marking: NDS355AN
• Drain Source Voltage Vds: 30 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 125 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 500 mW
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: NDS355AN
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.6 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2 V

RoHS: Yes

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