Datasheet Fairchild FDS6679 — Datenblatt

FDS6679
30 Volt P-Channel PowerTrench® MOSFET
General Description Features This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers. • –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
RDS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (±25V) for battery applications These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency. • High power and current handling capability D D low RDS(ON) D D SO-8 S S S G Absolute Maximum Ratings
Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current –13 A – Continuous (Note 1a) – Pulsed
PD –50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0
–55 to +175 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDS6679 FDS6679 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS6679 Rev C1 (W) FDS6679 March 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient VGS = 0 V, ID = –250 µA Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA –3 V On Characteristics …