Datasheet Fairchild FDC5614P — Datenblatt

DATA SHEET
www.onsemi.com MOSFET – P-Channel,
POWERTRENCH), Logic
Level VDSS RDS(on) MAX ID MAX 0.105 @ −10 V −60 V −3 A 0.135 @ −4.5 V 60 V S
D FDC5614P D Description D This 60 V P−Channel MOSFET uses onsemi’s high voltage
POWERTRENCH process. It has been optimized for power
management applications. D G TSOT23 6−Lead
(SUPERSOTt−6)
CASE 419BL Features • −3 A, −60 V MARKING DIAGRAM RDS(on) = 0.105 @ VGS = −10 V
♦ RDS(on) = 0.135 @ VGS = −4.5 V
Fast Switching Speed
High Performance Trench Technology for Extremely Low RDS(on)
This is a Pb−Free and Halide Free Device
♦ •
•
• 564 MG
G
1
564 = Specific Device Code
M
= Date Code
G
= Pb−Free Package Applications • DC−DC Converters …