Datasheet FDB8880 - Fairchild MOSFET, N, D2-PAK — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, N, D2-PAK

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Docket:
FDP8880 / FDB8880
February 2005
FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET
30V, 54A, 11.6m Features
r DS(ON) = 14.5m, VGS = 4.5V, ID = 40A r DS(ON) = 11.6m, VGS = 10V, ID = 40A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability

Specifications:

• Continuous Drain Current Id: 54 A
• Current Id Max: 11 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 15.49 mm
• External Length / Height: 4.69 mm
• External Width: 10.54 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 9.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: D2-PAK
• Power Dissipation: 55 W
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: FDB8880
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1.2 V

RoHS: Yes