Datasheet FDA16N50_F109 - Fairchild MOSFET, N, TO-3P — Datenblatt

Fairchild FDA16N50_F109

Part Number: FDA16N50_F109

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, N, TO-3P

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Docket:
FDA16N50 500V N-Channel MOSFET
FDA16N50
500V N-Channel MOSFET Features
· 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V · Low gate charge ( typical 32 nC) · Low Crss ( typical 20 pF) · Fast switching · 100% avalanche tested · Improved dv/dt capability
UniFET

Specifications:

  • Continuous Drain Current Id: 16.5 A
  • Current Id Max: 16.5 A
  • Drain Source Voltage Vds: 500 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On Resistance Rds(on): 380 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-3P
  • Power Dissipation Pd: 205 W
  • Pulse Current Idm: 66 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-3P
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 500 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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