Datasheet ZXMN2A03E6 - Diodes MOSFET, N, SOT-23-6 — Datenblatt

Diodes ZXMN2A03E6

Part Number: ZXMN2A03E6

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, N, SOT-23-6

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Docket:
ZXMN2A03E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.055
D=4.5A
DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications. FEATURES

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 4.5 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • Number of Pins: 6
  • Number of Transistors: 1
  • On Resistance Rds(on): 55 MOhm
  • On State Resistance Max: 55 MOhm
  • Package / Case: SOT-23-6
  • Power Dissipation Pd: 1.1 W
  • Power Dissipation Ptot Max: 1.1 W
  • Pulse Current Idm: 16 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SMD Marking: 2A3
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Min: 700 mV

RoHS: Yes