Datasheet ZXMN2B01F - Diodes MOSFET, N, SOT-23 — Datenblatt

Diodes ZXMN2B01F

Part Number: ZXMN2B01F

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, N, SOT-23

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Docket:
ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS RDS(on) ( ) 0.100 @ VGS= 4.5V 20 0.150 @ VGS= 2.5V 0.200 @ VGS= 1.8V ID (A) 2.4 2.0 1.7
Description
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Simulation ModelSimulation Model

Specifications:

  • Capacitance Ciss Typ: 370 pF
  • Continuous Drain Current Id: 2.4 A
  • Current Id Max: 2.4 A
  • Drain Source Voltage Vds: 20 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • N-channel Gate Charge: 4.8nC
  • Number of Pins: 3
  • On Resistance Rds(on): 100 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation Pd: 625 mW
  • Pulse Current Idm: 11.8 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Reverse Recovery Time trr Typ: 6.7 ns
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Turn Off Time: 17.8 ns
  • Turn On Time: 2.2 ns
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 8 V
  • Voltage Vgs Rds N Channel: 4.5 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Max: 1 V
  • Voltage Vgs th Min: 0.4 V

RoHS: Yes