Datasheet ZVN3310A - Diodes MOSFET, N, E-LINE — Datenblatt

Diodes ZVN3310A

Part Number: ZVN3310A

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, N, E-LINE

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Docket:
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 ­ MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 10
ZVN3310A
D G
S

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 200 mA
  • Current Id Max: 200 mA
  • Current Temperature: 25°C
  • Device Marking: ZVN3310A
  • Drain Source Voltage Vds: 100 V
  • Full Power Rating Temperature: 25°C
  • Lead Spacing: 1.27 mm
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • Number of Transistors: 1
  • On Resistance Rds(on): 10 Ohm
  • Package / Case: E-Line
  • Power Dissipation Pd: 625 mW
  • Power Dissipation Ptot Max: 625 mW
  • Pulse Current Idm: 2 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 2.4 V
  • Transistor Case Style: E-Line
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Max: 2.4 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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