Datasheet STMicroelectronics BD910 — Datenblatt

BD909/911
BD910/912 ® COMPLEMENTARY SILICON POWER TRANSISTORS
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SALESTYPES DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively. 3
1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 80 100 V VEBO Emitter-Base Voltage (I C = 0) I E ,IC Collector Current IB
P tot
Tstg
Tj Base Current
Total Dissipation at T c ≤ 25 C
Storage Temperature
o Max. Operating Junction Temperature 5 V 15 A 5 A 90 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. October 1999 1/6 BD909 / BD910 / BD911 / BD912
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max o 1.4 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO Parameter
Collector Cut-off …