Datasheet MJD350G - ON Semiconductor BIPOLAR TRANSISTOR, PNP, -300 V — Datenblatt

ON Semiconductor MJD350G

Part Number: MJD350G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP, -300 V

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 300 V
  • DC Collector Current: 500 mA
  • DC Current Gain Max (hfe): 240
  • Operating Temperature Range: -65°C to +150°C
  • Power Dissipation Pd: 1.56 W
  • Transistor Polarity: PNP

RoHS: Yes