Datasheet ON Semiconductor 2N6667G — Datenblatt

2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general−purpose amplifier and low speed switching
applications. • High DC Current Gain −
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• hFE = 3500 (Typ) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6667
= 80 Vdc (Min) − 2N6668
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
Complementary to 2N6387, 2N6388
These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60−80 V, 65 W 4 COLLECTOR 1 …