Datasheet ON Semiconductor MJL4281AG — Datenblatt

MJL4281A (NPN)
MJL4302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are power transistors for high
power audio.
Features 350 V Collector-Emitter Sustaining Voltage Gain Complementary: Gain Linearity from 100 mA to 5 A
High Gain -80 to 240
hFE = 50 (min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area -1.0 A/100 V @ 1 Second
High fT
Pb-Free Packages are Available* http://onsemi.com 15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
350 VOLTS, 230 WATTS 1 2 3
TO-264
CASE 340G
STYLE 2 MAXIMUM RATINGS (TJ = 25В°C unless otherwise noted)
Symbol Value Unit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage VCBO 350 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector-Emitter Voltage -1.5 V VCEX 350 Vdc Collector Current -Continuous
Collector Current -Peak (Note 1) IC 15
30 Adc Base Current -Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25В°C …