Datasheet MJE18006G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 450 V, TO-220 — Datenblatt

Part Number: MJE18006G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 450 V, TO-220

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Docket:
MJE18006G SWITCHMODEt
NPN Bipolar Power Transistor For Switching Power Supply Applications
The MJE18006G has an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.
Features http://onsemi.com
· Improved Efficiency Due to Low Base Drive Requirements:

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 450 V
  • DC Collector Current: 6 A
  • DC Current Gain Max (hfe): 14
  • Power Dissipation Pd: 100 W
  • Transistor Polarity: NPN
  • Transition Frequency Typ ft: 14 MHz

RoHS: Yes

Accessories:

  • WAKEFIELD SOLUTIONS - 273-AB