PDF, 128 Kb, Sprache: en, Revision: 8, Datei hochgeladen: Apr 4, 2019, Seiten: 7
General Purpose Transistors
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2N3903, 2N3904
General Purpose
Transistors
NPN Silicon
Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR
3 MAXIMUM RATINGS
Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation
@ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Device Dissipation
@ TC = 25°C
Derate above 25°C PD 1.5
12 W
mW/°C −55 to +150 °C Max Unit Operating and Storage Junction
Temperature Range TJ, Tstg THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements. 2
BASE
1
…