Datasheet MMBT5550LT1G - ON Semiconductor BIPOLAR TRANSISTOR — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR

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Docket:
MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Specifications:

• Collector Emitter Voltage V(br)ceo: 140 V
• Collector Emitter Voltage Vces: 60 V
• Current Ic Continuous a Max: 60 mA
• DC Collector Current: 600 mA
• DC Current Gain Min: 250
• DC Current Gain: 250
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 225 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Transistor Type: Power Bipolar

RoHS: Yes