Datasheet MJE243G - ON Semiconductor TRANSISTOR, NPN, TO-225 — Datenblatt

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Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, TO-225

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Docket:
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low-current, high-speed switching applications.
Features http://onsemi.com
· High Collector-Emitter Sustaining Voltage - · High DC Current Gain @ IC = 200 mAdc · · · ·
VCEO(sus) = 100 Vdc (Min) hFE = 40 -200 = 40 -120 Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb-Free Packages are Available*

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 300 mV
• Complementary Device: MJE253
• Continuous Collector Current Ic Max: 4 A
• Current Ic Continuous a Max: 1 A
• DC Collector Current: 4 A
• DC Current Gain Min: 15
• DC Current Gain: 1 A
• Gain Bandwidth ft Min: 40 MHz
• Gain Bandwidth ft Typ: 40 MHz
• Mounting Type: Through Hole
• Number of Pins: 3
• Package / Case: TO-225
• Power Dissipation Pd: 15 mW
• Power Dissipation Ptot Max: 15 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-225
• Transistor Polarity: NPN
• Voltage Vcbo: 100 V

RoHS: Yes