Datasheet MJD112G - ON Semiconductor TRANSISTOR, NPN, D-PAK — Datenblatt

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Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, D-PAK

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Docket:
MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
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· Lead Formed for Surface Mount Applications in Plastic Sleeves · · ·

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 2 V
• Complementary Device: MJD117G
• Continuous Collector Current Ic Max: 2 A
• Current Ic Continuous a Max: 4 A
• DC Collector Current: 2 A
• DC Current Gain Min: 200
• DC Current Gain: 2 A
• Gain Bandwidth ft Typ: 25 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Package / Case: D-PAK
• Peak Current Icm: 4 A
• Power Dissipation Pd: 20 W
• Power Dissipation Ptot Max: 20 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: D-PAK
• Transistor Polarity: NPN
• Voltage Vcbo: 100 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE901