Datasheet BUT11A - NXP TRANSISTOR, NPN, TO-220AB — Datenblatt
Part Number: BUT11A
Detaillierte Beschreibung
Manufacturer: NXP
Description: TRANSISTOR, NPN, TO-220AB
Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Specifications:
- Collector Emitter Voltage V(br)ceo: 450 V
- Collector Emitter Voltage Vces: 1.5 V
- Continuous Collector Current Ic Max: 5 A
- Current Ic Continuous a Max: 5 A
- DC Collector Current: 5 A
- DC Current Gain Max: 35
- DC Current Gain Min: 10
- DC Current Gain Typ: 20
- DC Current Gain: 500 mA
- Fall Time @ Ic: 0.8 µs
- Lead Spacing: 2.54 mm
- Mounting Type: Through Hole
- Number of Pins: 3
- Number of Transistors: 1
- Package / Case: TO-220AB
- Power Dissipation Pd: 100 W
- Power Dissipation Ptot Max: 100 W
- SVHC: No SVHC (18-Jun-2010)
- Transistor Case Style: TO-220AB
- Transistor Polarity: NPN
- Voltage Vces: 1 kV
RoHS: Yes
Accessories:
- Fischer Elektronik - SK 145/37,5 STS-220
- Fischer Elektronik - SK 409/25,4 STS
- Fischer Elektronik - SK 409/50,8 STS
- Fischer Elektronik - WLK 5