Datasheet PBSS8110Y,115 - NXP BISS TRANSISTOR, NPN, 100 V, 1 A, 6-SOT-363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: BISS TRANSISTOR, NPN, 100 V, 1 A, 6-SOT-363

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Docket:
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev.

02 -- 21 November 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 1 A
• DC Current Gain Max (hfe): 150
• Power Dissipation Pd: 290 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 100 MHz

RoHS: Yes

Andere Namen:

PBSS8110Y115, PBSS8110Y 115