Datasheet PBSS306NZ,135 - NXP TRANS NPN 100 V 5.1 A SOT-223 — Datenblatt

NXP PBSS306NZ,135

Part Number: PBSS306NZ,135

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANS NPN 100 V 5.1 A SOT-223

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Docket:
PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor
Rev.

02 -- 11 December 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Collector Emitter Voltage V(br)ceo: 100 V
  • Collector Emitter Voltage Vces: 40 mV
  • Current Ic Continuous a Max: 500 mA
  • DC Collector Current: 5.1 A
  • DC Current Gain Min: 200
  • DC Current Gain: 330
  • Gain Bandwidth ft Typ: 110 MHz
  • Mounting Type: SMD
  • Number of Pins: 4
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-223
  • Power Dissipation: 700 mW
  • Transistor Case Style: SOT-223
  • Transistor Polarity: NPN
  • Transistor Type: Low Saturation (BISS)
  • Transition Frequency Typ ft: 110 MHz
  • RoHS: Yes
  • SVHC: No SVHC (19-Dec-2011)

Andere Namen:

PBSS306NZ135, PBSS306NZ 135