Datasheet NTE61 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -140 V TO-3 — Datenblatt
Part Number: NTE61
Detaillierte Beschreibung
Manufacturer: NTE Electronics
Description: BIPOLAR TRANSISTOR, PNP, -140 V TO-3
Docket:
NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications
Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Specifications:
- Collector Emitter Voltage V(br)ceo: -140 V
- DC Collector Current: 17 A
- DC Current Gain Max (hfe): 25
- Power Dissipation Pd: 200 W
- Transistor Polarity: PNP
- Transition Frequency Typ ft: 2 MHz
RoHS: Yes