Datasheet NTE55 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -150 V, TO-220 — Datenblatt
Part Number: NTE55
Detaillierte Beschreibung
Manufacturer: NTE Electronics
Description: BIPOLAR TRANSISTOR, PNP, -150 V, TO-220
Docket:
NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier
Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.
Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D CollectorEmitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current GainBandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V EmitterBase Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . .
Specifications:
- Collector Emitter Voltage V(br)ceo: -150 V
- DC Collector Current: -8 A
- DC Current Gain Max (hfe): 40
- Power Dissipation Pd: 50 W
- Transistor Polarity: PNP
- Transition Frequency Typ ft: 30 MHz
RoHS: Yes
Accessories:
- WAKEFIELD SOLUTIONS - 273-AB