Datasheet NTE159M - NTE Electronics BIPOLAR TRANSISTOR, PNP, -60 V TO-18 — Datenblatt
Part Number: NTE159M
Detaillierte Beschreibung
Manufacturer: NTE Electronics
Description: BIPOLAR TRANSISTOR, PNP, -60 V TO-18
Docket:
NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose
Description: The NTE123A (NPN) and NTE159M (PNP) are widely used "Industry Standard" complementary transistors in a TO18 type case designed for applications such as mediumspeed switching and amplifiers from audio to VHF frequencies.
Features: D Low Collector Saturation Voltage: 1V (Max) D High Current GainBandwidth Product: fT = 300MHz (Min) @ IC 20mA Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CollectorBase Voltage, VCBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . .
Specifications:
- Collector Emitter Voltage V(br)ceo: -60 V
- DC Collector Current: -600 mA
- DC Current Gain Max (hfe): 100
- Power Dissipation Pd: 400 mW
- Transistor Polarity: PNP
- Transition Frequency Typ ft: 200 MHz
RoHS: Yes