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Silicon planar medium power transistor datasheet
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR ZTX649
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 25 50 pF VCB=10V f=1MHz Switching Times ton 55 ns toff 300 ns IC=500mA, VCC=10V
IB1=IB2=50mA *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% SYMBOL MAX. UNIT 175
116
70 °C/W
°C/W
°C/W Rth(j-amb)1
Rth(j-amb)2
Rth(j-case) Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case C
B Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E E-Line
TO92 Compatible ABSOLUTE MAXIMUM RATINGS. THERMAL CHARACTERISTICS
PARAMETER ZTX649 ISSUE 2 APRIL 94
FEATURES
* 25 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
APPLICATIONS
* Motor driver
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