Datasheet VS-GA200SA60UP - Vishay IGBT, SOT-227 — Datenblatt

Vishay VS-GA200SA60UP

Part Number: VS-GA200SA60UP

Detaillierte Beschreibung

Manufacturer: Vishay

Description: IGBT, SOT-227

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Docket:
PD -50066A
GA200SA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
· UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode · Very low conduction and switching losses · Fully isolate package ( 2,500 Volt AC/RMS) · Very low internal inductance ( 5 nH typ.) · Industry standard outline

Specifications:

  • Collector Emitter Voltage V(br)ceo: 600 V
  • Collector Emitter Voltage Vces: 1.6 V
  • Current Ic Continuous a Max: 200 A
  • Current Temperature: 25°C
  • DC Collector Current: 200 A
  • Fall Time tf: 460 ns
  • Full Power Rating Temperature: 25°C
  • Number of Pins: 4
  • Number of Transistors: 1
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Max: 500 W
  • Power Dissipation Pd: 500 W
  • Power Dissipation: 500 W
  • Pulsed Current Icm: 400 A
  • Rise Time: 75 ns
  • Termination Type: Screw
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Nettlefolds - MB04040010007FA
  • SCHRODER - 13459

Andere Namen:

VSGA200SA60UP, VS GA200SA60UP