Datasheet IHW20N120R3 - Infineon IGBT+ DIODE,1200V,20A,TO247 — Datenblatt

Infineon IHW20N120R3

Part Number: IHW20N120R3

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT+ DIODE,1200V,20A,TO247

data sheetDownload Data Sheet

Docket:
IHW20N120R3
IH-series
Reverse conducting IGBT with monolithic body diode
Features: · Powerful monolithic body diode with low forward voltage designed for soft commutation only · TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat · Low EMI · Qualified according to JEDEC J-STD-020 and JESD-022 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: · Inductive cooking
C G E

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 20 A
  • Collector Emitter Voltage Vces: 1.7 V
  • Power Dissipation Max: 310 W
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Operating Temperature Range: -40°C to +175°C
  • Transistor Case Style: TO-247
  • Number of Pins: 3

RoHS: Yes

Accessories:

  • Fischer Elektronik - THFU 2