Datasheet JX Semiconductor JX3S0080120M — Datenblatt

JX3S0080120M
1200V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size. Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to parallel and simple to drive
ROHS Compliant, Halogen free Application
EV Charging
High Voltage DC/DC Converters
Switch Mode Power Supplies
Power Factor Correction Modules Ordering Information
Part Number
JX3S0080120M Marking
JX3S0080120M 1 Package Packaging TO-247 Tube JX3S0080120M
Absolute Maximum Ratings(Tc=25 )
Symbol
VDS Parameter
Drain-Source Voltage Value Unit 1200 V ID Drain Current(continuous)at Tc=25C 32 A ID Drain Current(continuous)at Tc=100C 23 A IDM Drain Current (pulsed) 80 A VGS Gate-Source Voltage -10/+22 V 145 W -55 to +150 C PD
TJ, Tstg Power Dissipation TC = 25°C …