Datasheet JX Semiconductor JX3S0750170M — Datenblatt

JX3S0750170M
1700V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, fJXer operating frequency, increased power density, reduced EMI, and
reduced system size. Features High Speed Switching with Low Capacitances
JX Semi with 12V Gate Drive
Lower QG and Device Capacitances(Coss,Crss)
Body Diode with Low VF and Low QRR
FJXer and More Efficient Switching
ROHS Compliant, Halogen free Application Solar String Inveter and Central Inverter
UPS Switch Mode Power Supplies
Power Factor Correction Modules Battery Charging
Auxiliary Power Supply
High Voltage Coverter Ordering Information
Part Number
JX3S0750170M Marking Package Packaging ASC5N1700MT3 TO-247 Tube 1 JX-3T04-02A A/2 JX3S0750170M
Absolute Maximum Ratings(Tc=25℃)
Symbol
VDS Parameter
Drain-Source Voltage Value Unit 1700 V ID Drain Current(continuous)at Tc=25℃ 5 A ID Drain Current(continuous)at Tc=100℃ 3 A IDM Drain Current (pulsed) 10 A VGS Gate-Source Voltage -8/+19 V 60 W -55 to +175 ℃ PD
TJ, Tstg Power Dissipation TC = 25°C …