Datasheet Inchange Semiconductor IRFP260N — Datenblatt

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N FEATURES Static drain-source on-resistance:
RDS(on)≤40mΩ Enhancement mode: 100% avalanche tested Minimum Lot-to-Lot variations for robust device
performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a) PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.5 ℃/W 40 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT
V 4.0 V 40 mΩ ±0.1 μA VDS=200V; VGS= 0V 25 μA IS=28A, VGS = 0V 1.3 V 2 isc & iscsemi is registered trademark …