Datasheet Nexperia PMV65ENEAR — Datenblatt
40 V, N-Kanal-Trench-MOSFET
Datenblätter
Datasheet PMV65ENEA
PDF, 733 Kb, Sprache: en, Revision: 20201703, Datei hochgeladen: Oct 13, 2025, Seiten: 16
40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
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Detaillierte Beschreibung
N-Kanal-Feldeffekttransistor (FET) im Anreicherungsmodus in einem kleinen SOT23 (TO-236AB) Surface-Mounted Device (SMD)-Kunststoffgehäuse mit Trench-MOSFET-Technologie.
Parameter
| Automotive qualified | Y |
| Ciss [typ] (pF) | 160 |
| Coss [typ] (pF) | 25 |
| Channel type | N |
| ID [max] (A) | 2.7 |
| Nr of transistors | 1 |
| Ordering code (12NC) | 934070123215 |
| Ptot [max] (W) | 0.94 |
| Package name | SOT23 |
| Package version | SOT23 |
| Packing | SOT23_215 |
| Packing Quantity | 3,000 |
| Product status | Not for design in |
| QG(tot) [typ] @ VGS = 10 V (nC) | 4.1 |
| QGD [typ] (nC) | 0.8 |
| RDSon [max] @ VGS = 10 V (mΩ) | 75 |
| RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | 99 |
| Release date | 2016-04-28 |
| Status | Active |
| Tj [max] (°C) | 150 |
| VDS [max] (V) | 40 |
| VGSth [typ] (V) | 1.6 |
Modellreihe
Serie: PMV65ENEA (1)
- PMV65ENEAR
Herstellerklassifikation
- Automotive qualified products (AEC-Q100/Q101) > Automotive MOSFETs