Datasheet ON Semiconductor FGD3050G2V — Datenblatt

DATA SHEET
www.onsemi.com ECOSPARK 2 Ignition IGBT COLLECTOR 300 mJ, 500 V, N−Channel Ignition IGBT
GATE FGD3050G2V R1
R2 Features EMITTER SCIS Energy = 300 mJ at TJ = 25C
Logic Level Gate Drive
AEC−Q101 Qualified and PPAP Capable
These Device is Pb−Free and are RoHS Compliant 4
1 2 Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Application 3 DPAK (SINGLE GAUGE)
CASE 369C MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown
Voltage (IC = 1 mA) 500 V BVECS Emitter to Collector Voltage − Reverse
Battery Condition (IC = 10 mA) 20 V ESCIS25 Self Clamping Inductive Switching
Energy (Note 1) 300 mJ ESCIS150 Self Clamping Inductive Switching
Energy (Note 2) 180 mJ IC25 Collector Current Continuous
at VGE = 4.0 V, TC = 25C 32 A IC110 Collector Current Continuous
at VGE = 4.0 V, TC = 110C 27 A VGEM Gate to Emitter Voltage Continuous 10 V PD Power Dissipation Total, TC = 25C 150 W Power Dissipation Derating, for TC >
25C 1.1 W/C Operating Junction Temperature Range −40 to +175 C TSTG Storage Junction Temperature Range −40 to +175 C TL Max. Lead Temperature for Soldering
(Leads at 1.6 mm from case for 10 s) 300 C TPKG Max. Lead Temperature for Soldering
(Package Body for 10 s) 260 C ESD Electrostatic Discharge Voltage at
100 pF, 1500 4 kV TJ MARKING DIAGRAM ALYWW
FGD
3050G2G
A …