Datasheet GT25Q102 - Toshiba IGBT, 1200 V, TO-3P(LH) — Datenblatt

Toshiba GT25Q102

Part Number: GT25Q102

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(LH)

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Docket:
GT25Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
Unit: mm

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 25 A
  • Collector Emitter Voltage Vces: 2.7 V
  • Power Dissipation Max: 200 W
  • Collector Emitter Voltage V(br)ceo: 1200 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-3P (LH)
  • Current Ic Continuous a Max: 25 A
  • Fall Time Typ: 160 ns
  • Package / Case: TO-3P (LH)
  • Power Dissipation: 200 W
  • Power Dissipation Pd: 200 W
  • Pulsed Current Icm: 50 A
  • Rise Time: 100 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5