Datasheet GT20J101 - Toshiba IGBT, 600 V, TO-3P(N) — Datenblatt

Toshiba GT20J101

Part Number: GT20J101

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

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Docket:
GT20J101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm · · · · Third-generation IGBT Enhancement mode type High speed: tf = 0.30 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max)

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 20 A
  • Collector Emitter Voltage Vces: 2.7 V
  • Power Dissipation Max: 130 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-3P (N)
  • Number of Pins: 3
  • Current Ic Continuous a Max: 20 A
  • Package / Case: TO-3P (N)
  • Pin Format: GCE
  • Power Dissipation: 130 W
  • Power Dissipation Pd: 130 W
  • Pulsed Current Icm: 40 A
  • Rise Time: 12 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5