Datasheet GT10Q101 - Toshiba IGBT, 1200 V, TO-3P(N) — Datenblatt

Toshiba GT10Q101

Part Number: GT10Q101

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(N)

data sheetDownload Data Sheet

Docket:
GT10Q101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 10 A
  • Collector Emitter Voltage Vces: 2.7 V
  • Power Dissipation Max: 140 W
  • Collector Emitter Voltage V(br)ceo: 1200 V
  • Transistor Case Style: TO-3P (N)
  • Number of Pins: 3
  • Current Ic Continuous a Max: 10 A
  • Package / Case: TO-3P (N)
  • Pin Format: GCE
  • Power Dissipation: 140 W
  • Power Dissipation Pd: 140 W
  • Pulsed Current Icm: 20 A
  • Rise Time: 70 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5