Datasheet IKP01N120H2 - Infineon IGBT, N, 1200 V, 1.3 A, TO-220 — Datenblatt

Infineon IKP01N120H2

Part Number: IKP01N120H2

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT, N, 1200 V, 1.3 A, TO-220

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Docket:
IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
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Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Pb-free lead plating; RoHS compliant 2 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 1A Eoff 0.09mJ Tj 150°C Marking K01H1202 Package PG-TO-220-3-1

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 3.2 A
  • Collector Emitter Voltage Vces: 2.8 V
  • Power Dissipation Max: 28 W
  • Collector Emitter Voltage V(br)ceo: 1200 V
  • Operating Temperature Range: -40°C to +150°C
  • Transistor Case Style: TO-220
  • Current Ic Continuous a Max: 1.3 A
  • Number of Transistors: 1
  • Package / Case: TO-220
  • Power Dissipation: 28 W
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5