Datasheet IRGPS40B120UPBF - International Rectifier IGBT, 1200 V, 80 A, TO-274AA — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: IGBT, 1200 V, 80 A, TO-274AA

Download Data Sheet

Docket:
PD- 94295D
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
Features
· Non Punch Through IGBT Technology.

· 10µs Short Circuit Capability. · Square RBSOA. · Positive VCE (on) Temperature Coefficient. · Super-247 Package.

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 80 A
• Collector Emitter Voltage Vces: 3.5 V
• Power Dissipation Max: 595 W
• Collector Emitter Voltage V(br)ceo: 1200 V
• Transistor Case Style: TO-274AA
• Number of Pins: 3
• Current Ic Continuous a Max: 80 A
• Fall Time Max: 33 ns
• Package / Case: TO-274AA
• Power Dissipation: 595 W
• Power Dissipation Pd: 595 W
• Pulsed Current Icm: 160 A
• Rise Time: 25 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V

RoHS: Yes