T
60
5N D0 K 0
2 Features Applications ■ 600V, 5A, Low VCE(sat) ■ Switch-Mode Power Supplies (SMPS) ■ Novel field stop technology ■ Uninterruptible Power Sources (UPS) ■ Optimized for conduction ■ Power Factor Correction (PFC) ■ Robust
■ RoHS compliant* BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)
General Information Additional Information
Click these links for more information: ® The Bourns Model BIDD05N60T IGBT device combines technology from a MOS gate
and a bipolar transistor, resulting in an optimum component for high voltage and high
current applications. This device uses Trench-Gate Field-Stop technology providing
greater control of dynamic characteristics while resulting in a lower Collector-Emitter
Saturation Voltage (VCE(sat) and fewer switching losses. In addition, this structure
increases the robustness of the device. PRODUCT TECHNICAL INVENTORY SAMPLES
SELECTOR LIBRARY CONTACT Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified)
Parameter Collector-Emitter Voltage Symbol Value Unit VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 10 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 5 A Pulsed Collector Current, tp limited by Tjmax ICP 15 A Gate-Emitter Voltage VGE ±30 V IF 10 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 μs Total Power Dissipation Ptotal 82 W Storage Temperature TSTG -55 to +150 °C Tj -55 to +150 °C Symbol Max Unit IGBT Thermal Resistance Junction -Case Rth(j-c)_IGBT 1.51 °C/W Diode Thermal Resistance Junction -Case Rth(j-c)_Diode 2.14 °C/W Continuous Forward Current (TC = 25 °C), limited by Tjmax Operating Junction Temperature Thermal Resistance
Parameter Typical Part Marking Internal Circuit
2 2 MFR’S
TRADEMARK D05N60T
YYYYYYY *1 DEVICE CODE 1 LOT ID:
1ST CHARACTER INDICATES PRODUCTION LINE
2ND CHARACTER INDICATES GRADE
3RD CHARACTER INDICATES YEAR OF MANUFACTURE
4TH CHARACTER INDICATES MONTH OF MANUFACTURE
5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. …