Datasheet STGE200NB60S - STMicroelectronics IGBT, SOT-227 — Datenblatt

STMicroelectronics STGE200NB60S

Part Number: STGE200NB60S

Detaillierte Beschreibung

Manufacturer: STMicroelectronics

Description: IGBT, SOT-227

data sheetDownload Data Sheet

Docket:
STGE200NB60S
N-channel 150A - 600V - ISOTOP Low drop PowerMESHTM IGBT
General features
TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C
STGE200NB60S 600V

Specifications:

  • Transistor Type: IGBT Module
  • DC Collector Current: 200 A
  • Collector Emitter Voltage Vces: 1.2 V
  • Power Dissipation Max: 600 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: ISOTOP
  • Current Ic Continuous a Max: 150 A
  • Package / Case: ISOTOP
  • Power Dissipation: 600 W
  • Power Dissipation Pd: 600 W
  • Pulsed Current Icm: 400 A
  • Rise Time: 112 ns
  • Termination Type: Screw
  • Transistor Polarity: N Channel
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Nettlefolds - MB04040010007FA
  • SCHRODER - 13459